k6f1616r6m family preliminary revision 0.1 june 2001 1 cmos sram document title 1m x16 bit super low power and low voltage full cmos static ram revision history revision no. 0.0 0.1 remark preliminary preliminary history initial draft revise - change the package type from fbga to tbga - remove i cc , i sb - improve i cc2 from 30 to 20ma for 85ns product - improve i cc2 from 30 to 25ma for 70ns product - improve i sb1 from 30 to 15ua - improve i dr from 15 to 8ua draft date august 22, 2000 june 11, 2001 the attached datasheets are provided by samsung electronics. samsung electronics co., ltd. reserve the right to change the speci fications and products. samsung electronics will answer to yourquestions about device. if you have any questions, please contact the samsung b ranch offices.
k6f1616r6m family preliminary revision 0.1 june 2001 2 cmos sram 1m x 16 bit super low power and low voltage full cmos static ram general description the k6f1616r6m families are fabricated by samsung s advanced full cmos process technology. the families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. the families also support low data retention voltage for battery back-up operation with low data retention current. features process technology: full cmos organization: 1m x16 power supply voltage: 1.65~2.2v low data retention voltage: 1.0v(min) three state outputs package type: 48-tbga-9.00x12.00 name function name function cs 1 , cs 2 chip select inputs vcc power oe output enable input vss ground we write enable input ub upper byte(i/o 9 ~ 16 ) a 0 ~a 19 address inputs lb lower byte(i/o 1 ~ 8 ) i/o 1 ~i/o 16 data inputs/outputs dnu do not use pro duct family 1. the parameter is measured with 30pf test load. 2. typical value are measured at v cc =2.0v, t a =25 c and not 100% tested. product family operating temperature vcc range speed power dissipation pkg type standby (i sb1 , typ.) operating (i cc1 , max) k6f1616r6m-f industrial(-40~85 c) 1.65~2.2v 70 1) /85ns 1 m a 2) 3ma 48-tbga-9.00x12.00 samsung electronics co., ltd. reserves the right to change products and specifications without notice. functional block diagram clk gen. row select i/o 1 ~i/o 8 data cont data cont data cont i/o 9 ~i/o 16 vcc vss precharge circuit. memory cell array i/o circuit column select pin description 48-tbga: top view (ball down) lb oe a0 a1 a2 cs2 i/o9 ub a3 a4 cs 1 i/o1 i/o10 i/o11 a5 a6 i/o2 i/o3 vss i/o12 a17 a7 i/o4 vcc vcc i/o13 vss a16 i/o5 vss i/o15 i/o14 a14 a15 i/o6 i/o7 i/o16 a19 a12 a13 we i/o8 a18 a8 a9 a10 a11 dnu 1 2 3 4 5 6 a b c d e f g h we oe ub cs 1 lb control logic cs2 row addresses column addresses
k6f1616r6m family preliminary revision 0.1 june 2001 3 cmos sram product list industrial temperature products(-40~85 c) part name function k6f1616r6m-ef70 k6f1616r6m-ef85 48-tbga, 70ns, 1.8/2.0v 48-tbga, 85ns, 1.8/2.0v absolute maximum ratings 1) 1. stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. functional oper ation should be restricted to recommended operating condition. exposure to absolute maximum rating conditions for extended periods may affect re liability. item symbol ratings unit voltage on any pin relative to vss v in ,v out -0.2 to v cc +0.3v(max. 2.6v) v voltage on vcc supply relative to vss v cc -0.2 to 2.6 v power dissipation p d 1.0 w storage temperature t stg -65 to 150 c operating temperature t a -40 to 85 c functional description 1. x means don t care. (must be low or high state) cs 1 cs 2 oe we lb ub i/o 1~8 i/o 9~16 mode power h x 1) x 1) x 1) x 1) x 1) high-z high-z deselected standby x 1) l x 1) x 1) x 1) x 1) high-z high-z deselected standby x 1) x 1) x 1) x 1) h h high-z high-z deselected standby l h h h l x 1) high-z high-z output disabled active l h h h x 1) l high-z high-z output disabled active l h l h l h dout high-z lower byte read active l h l h h l high-z dout upper byte read active l h l h l l dout dout word read active l h x 1) l l h din high-z lower byte write active l h x 1) l h l high-z din upper byte write active l h x 1) l l l din din word write active
k6f1616r6m family preliminary revision 0.1 june 2001 4 cmos sram recommended dc operating conditions 1) note: 1. t a =-40 to 85 c, otherwise specified 2. overshoot: v cc +1.0v in case of pulse width 20ns. 3. undershoot: -1.0v in case of pulse width 20ns. 4. overshoot and undershoot are sampled, not 100% tested. item symbol min typ max unit supply voltage vcc 1.65 1.8/2.0 2.2 v ground vss 0 0 0 v input high voltage v ih 1.4 - vcc+0.2 2) v input low voltage v il -0.2 3) - 0.4 v capacitance 1) (f=1mhz, t a =25 c) 1. capacitance is sampled, not 100% tested item symbol test condition min max unit input capacitance c in v in =0v - 8 pf input/output capacitance c io v io =0v - 10 pf dc and operating characteristics 1. typical value are measured at v cc =2.0v, t a =25 c and not 100% tested. item symbol test conditions min typ 1) max unit input leakage current i li v in =vss to vcc -1 - 1 m a output leakage current i lo cs 1 =v ih or cs 2 =v il or oe =v ih or we =v il or lb = ub =v ih , v io =vss to vcc -1 - 1 m a average operating current i cc1 cycle time=1 m s, 100%duty, i io =0ma, cs 1 0.2v, lb 0.2v or/and ub 0.2v, cs 2 3 vcc-0.2v, v in 0.2v or v in 3 v cc -0.2v - - 3 ma i cc2 cycle time=min, i io =0ma, 100% duty, cs 1 =v il , cs 2 =v ih , lb =v il or/and ub =v il , v in =v il or v ih 85ns - - 20 ma 70ns - - 25 output low voltage v ol i ol = 0.1ma - - 0.2 v output high voltage v oh i oh = -0.1ma 1.4 - - v standby current(cmos) i sb1 other input =0~vcc 1) cs 1 3 vcc-0.2v, cs 2 3 vcc-0.2v( cs 1 controlled) or 2) 0v cs 2 0.2v(cs 2 controlled) or 3) lb = ub 3 vcc-0.2v, cs 2 3 vcc-0.2v( lb / ub controlled) - 1 15 m a
k6f1616r6m family preliminary revision 0.1 june 2001 5 cmos sram ac operating conditions test conditions (test load and input/output reference) input pulse level: 0.2 to vcc-0.2v input rising and falling time: 5ns input and output reference voltage: 0.9v output load(see right): c l =100pf+1ttl c l =30pf+1ttl data retention characteristics 1. 1) cs 1 3 vcc-0.2v, cs 2 3 vcc-0.2v( cs 1 controlled) or 2) 0 cs 2 0.2v(cs 2 controlled) or 3) lb = ub 3 vcc-0.2v, cs 2 3 vcc-0.2v( lb / ub controlled) 2. typical value are measured at t a =25 c and not 100% tested. item symbol test condition min typ 2) max unit vcc for data retention v dr cs 1 3 vcc-0.2v 1) 1.0 - 2.2 v data retention current i dr vcc=1.5v, cs 1 3 vcc-0.2v 1) , v in 3 0v - 0.5 8 m a data retention set-up time t sdr see data retention waveform 0 - - ns recovery time t rdr trc - - ac characteristics (vcc=1.65~2.2v, t a =-40 to 85 c) parameter list symbol speed bins units 70ns 85ns min max min max read read cycle time t rc 70 - 85 - ns address access time t aa - 70 - 85 ns chip select to output t co1 , t co2 - 70 - 85 ns output enable to valid output t oe - 35 - 40 ns lb , ub valid to data output t ba - 70 - 85 ns chip select to low-z output t lz1 , t lz2 10 - 10 - ns output enable to low-z output t olz 5 - 5 - ns lb , ub enable to low-z output t blz 10 - 10 - ns output hold from address change t oh 10 - 10 - ns chip disable to high-z output t hz1 , t hz2 0 25 0 25 ns oe disable to high-z output t ohz 0 25 0 25 ns ub , lb disable to high-z output t bhz 0 25 0 25 ns write write cycle time t wc 70 - 85 - ns chip select to end of write t cw1 , t cw2 60 - 70 - ns address set-up time t as 0 - 0 - ns address valid to end of write t aw 60 - 70 - ns write pulse width t wp 50 - 60 - ns write recovery time t wr 0 - 0 - ns write to output high-z t whz 0 20 0 25 ns data to write time overlap t dw 30 - 35 - ns data hold from write time t dh 0 - 0 - ns end write to output low-z t ow 5 - 5 - ns lb , ub valid to end of write t bw 60 - 70 - ns c l 1) 1. including scope and jig capacitance r 2 2) r 1 2) v tm 3) 2. r 1 =3070 w , r 2 =3150 w 3. v tm =1.8v
k6f1616r6m family preliminary revision 0.1 june 2001 6 cmos sram address data out previous data valid data valid timing diagrams timing waveform of read cycle(1) (address controlled , cs 1 = oe =v il , cs 2 = we =v ih , ub or/and lb =v il ) timing waveform of read cycle(2) ( we =v ih ) data valid high-z t rc cs 1 address ub , lb oe data out t aa t rc t oh t oh t aa t co t ba t oe t olz t blz t lz t ohz t bhz t hz notes (read cycle) 1. t hz and t ohz are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. at any given temperature and voltage condition, t hz (max.) is less than t lz (min.) both for a given device and from device to device interconnection. cs 2
k6f1616r6m family preliminary revision 0.1 june 2001 7 cmos sram timing waveform of write cycle(2) ( cs 1 controlled) address data valid ub , lb we data in data out high-z high-z t wc t cw(2) t aw t bw t wp(1) t dh t dw t wr(4) t as(3) cs 1 cs 2 timing waveform of write cycle(1) ( we controlled) address cs 1 data undefined ub , lb we data in data out t wc t cw(2) t wr(4) t aw t bw t wp(1) t as(3) t dh t dw t whz t ow high-z high-z data valid cs 2
k6f1616r6m family preliminary revision 0.1 june 2001 8 cmos sram address data valid ub , lb we data in data out high-z high-z timing waveform of write cycle(3) ( ub , lb controlled) notes (write cycle) 1. a wri t e occurs during the overlap(t wp ) of low cs 1 and low we . a write begins when cs 1 goes low and we goes low with asserting ub or lb for single byte operation or simultaneously asserting ub and lb for double byte operation. a write ends at the earliest tran- sition when cs 1 goes high and we goes high. the t wp is measured from the beginning of write to the end of write. 2. t cw is measured from the cs 1 going low to the end of write. 3. t as is measured from the address valid to the beginning of write. 4. t wr is measured from the end of write to the address change. t wr applied in case a write ends as cs 1 or we going high. t wc t cw(2) t bw t wp(1) t dh t dw t wr(4) t aw data retention wave form cs 1 , lb / ub controlled v cc 1.65v 1.4v v dr cs 1 , lb / ub gnd data retention mode cs 1 3 v cc - 0.2v, lb = ub 3 v cc - 0.2v t sdr t rdr t as(3) cs 1 cs 2 cs 2 controlled v cc 1.65v 0.4v v dr cs 2 gnd data retention mode t sdr t rdr cs 2 0.2v
k6f1616r6m family preliminary revision 0.1 june 2001 9 cmos sram c 1 / 2 package dimension 6 5 4 3 2 1 a b c d e f g h c b/2 b c 1 b c bottom view top view d e 2 e 1 e c side view 0 . 5 5 / t y p . 0 . 3 5 / t y p . a y detail a min typ max a - 0.75 - b 8.90 9.00 9.10 b1 - 3.75 - c 11.90 12.00 12.10 c1 - 5.25 - d 0.40 0.45 0.50 e 0.80 0.90 1.00 e1 - 0.55 - e2 0.30 0.35 0.40 y - - 0.08 b1 #a1 notes. 1. bump counts: 48(8 row x 6 column) 2. bump pitch: (x,y)=(0.75 x 0.75)(typ.) 3. all tolerence are 0.050 unless otherwise specified. 4. typ: typical 5. y is coplanarity: 0.08(max) unit: millimeters 48 ball tape ball grid array(0.75mm ball pitch)
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